Lew Reynolds
Materials Science Engineering
- Phone: 919.515.7622
- Email: clreynol@ncsu.edu
- Office: Engineering Building I (EB1) 3002C
Lew Reynolds was a Distinguished Member of Technical Staff at Bell Laboratories for 23 years before coming to NC State in 2003. He has 30 years of experience in the growth, characterization, and device development of III-V compound semiconductors. He has investigated extensively the influence of doping profiles on laser characteristics, developed MOVPE growth techniques for growth on gratings and along mesa sidewalls to minimize defects, and collaborated on the design of high-speed photonic devices. More recent efforts have focused on mobility modulation in AlGaN HFET structures, strain relaxation in InGaAs solar cell structures, characterization of GaAsSb nanowires for mid-IR applications, and the pulse width dependence of optical gain in conjugated polymers.
He has been issued eight U.S. patents. His current research interests are compound semiconductor materials and devices, electrical and optical properties, thin film epitaxial growth of group III-nitrides and group II-oxides, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, quantum well structures, electronic and photonic devices, optical properties of conjugated polymers, and nanostructured materials. Currently, teach two undergraduate laboratory courses and a graduate one on nanoelectronics. Faculty contact is responsible for using MSE lab service center equipment, for example, SEM, X-ray diffractometer, SQUID VSM, and PPMS.
Research Interests
Reynolds’s interests include compound semiconductor materials and devices, epitaxial thin film growth, heteroepitaxy, strain relaxation in misfit systems, defects and interfaces, nanoscale materials, and optical properties of conjugated polymers.
Education
| Degree | Program | School | Year |
|---|---|---|---|
| Ph.D. | Doctor of Philosophy in Materials Science | University of Virginia | 1974 |
| MSMS | Master of Science in Materials Science | University of Virginia | 1972 |
| BSP | Bachelor of Science in Physics | Virginia Military Institute | 1970 |
Publications
- GaAs/GaAsSb Core-Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3?m Light Detection
- Pokharel, R., Kuchoor, H., Parakh, M., Devkota, S., Dawkins, K., Ramaswamy, P., … Iyer, S. (2023, March 20), ACS APPLIED NANO MATERIALS. https://doi.org/10.1021/acsanm.2c03644
- Magneto-Mechanical Actuation Induces Endothelial Permeability
- Kanber, M., Umerah, O., Brindley, S., Zhang, X., Brown, J. M., Reynolds, L., & Beltran-Huarac, J. (2023), ACS BIOMATERIALS SCIENCE & ENGINEERING, 9(12), 6902–6914. https://doi.org/10.1021/acsbiomaterials.3c01571
- The Role of Carbon Content: A Comparison of the Nickel Particle Size and Magnetic Property of Nickel/Polysiloxane-Derived Silicon Oxycarbide
- Yang, N., Zhang, X., Reynolds, L., Kumah, D., & Xu, C. (2023, January 24), ADVANCED ENGINEERING MATERIALS, Vol. 1. https://doi.org/10.1002/adem.202201453
- A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy
- Devkota, S., Parakh, M., Ramaswamy, P., Kuchoor, H., Penn, A., Reynolds, L., & Iyer, S. (2022), CATALYSTS, 12(5). https://doi.org/10.3390/catal12050451
- A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
- Ramaswamy, P., Devkota, S., Pokharel, R., Nalamati, S., Stevie, F., Jones, K., … Iyer, S. (2021), SCIENTIFIC REPORTS, 11(1). https://doi.org/10.1038/s41598-021-87825-4
- Dual-Responsive Microgels for Structural Repair and Recovery of Nonwoven Membranes for Liquid Filtration
- Ramesh, S., Davis, J., Roros, A., Eiben, J., Fabiani, T., Smith, R., … Menegatti, S. (2021), ACS APPLIED POLYMER MATERIALS, 3(3), 1508–1517. https://doi.org/10.1021/acsapm.0c01360
- Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching
- Allen-Perry, K., Straka, W., Keith, D., Han, S., Reynolds, L., Gautam, B., & Autrey, D. E. (2021), MATERIALS, 14(3). https://doi.org/10.3390/ma14030694
- A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
- Devkota, S., Parakh, M., Johnson, S., Ramaswamy, P., Lowe, M., Penn, A., … Iyer, S. (2020), NANOTECHNOLOGY, 31(50). https://doi.org/10.1088/1361-6528/abb506
- Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires
- Kumar, R., Liu, Y., Li, J., Iyer, S., & Reynolds, L. (2020), SCIENTIFIC REPORTS, 10(1). https://doi.org/10.1038/s41598-020-65805-4
- Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application
- Pokharel, R., Ramaswamy, P., Devkota, S., Parakh, M., Dawkins, K., Penn, A., … Iyer, S. (2020), ACS APPLIED ELECTRONIC MATERIALS, 2(9), 2730–2738. https://doi.org/10.1021/acsaelm.0c00450
Grants
- Excellence in Research: GaAsAb/GaAs Nanowire Based Avalanche Photodetectors on Si
- Dilute Nitride GaAsSbN/GaAs Nanowires for Infrared Photodectors
- A Study of GaAsSb Nanowires for Photodetectors
- Interfacial Induced Properties in GaN Devices
- Identification/Quantification of Low Level Recombination Centers in Silicon, SiSOC Core Project
- I/UCRC: Collaborative Research-Proposal for Phase II of the SiSoC NSF I/UCRC: Enhancing the Manufacturability of Silicon Solar Cells
- SiSoC Membership, Associate Member
- A study of GaAsSb Nanowires by Molecular Beam Epitaxy for Near IR Applications
