Ramon Collazo
Materials Science Engineering
- Phone: 919.515.8965
- Email: rcollaz@ncsu.edu
- Office: Research Building I 219
- Website: https://www.mse.ncsu.edu/collazo
Ramón Collazo is an associate professor and has been involved in the growth and characterization of wide bandgap semiconductor thin films, especially nitrides and diamonds, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunction and their application to the first lateral p/n junction. Additionally, he has been involved in developing AlN bulk single crystal substrates, their surface preparation and further epitaxial thin film deposition for optoelectronics and power device applications. He has authored over 60 publications and given presentations at national and international conferences.
Research Interests
Collazo’s research interests include optoelectronic/power materials and devices, III-N wide bandgap semiconductors, polar materials like nitrides and oxides and optics like materials characterization and nonlinear.
Education
| Degree | Program | School | Year |
|---|---|---|---|
| Ph.D. | Doctorate of Philosophy in Materials Science and Engineering | North Carolina State University | 2002 |
| BSP | Bachelor of Science in Physics | University of Puerto Rico | 1995 |
Honors and Awards
- 2022 | University Faculty Scholar, NC State University
- Facundo Bueso Medal for Physics, University of Puerto Rico
Discover more about Ramon Collazo
Publications
- Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
- Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024), JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623
- (Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
- Goorsky, M. S., Liao, M. E., Huynh, K., Wang, Y., Tweedie, J., Sitar, Z., … Huang, X. (2023), ECS Meeting Abstracts. https://doi.org/10.1149/MA2023-02351691mtgabs
- Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
- Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12), IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592
- Anderson transition in compositionally graded p-AlGaN
- Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023), JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419
- Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
- Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
- Demonstration of near-ideal Schottky contacts to Si-doped AlN
- Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524
- High conductivity and low activation energy in p-type AlGaN
- Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023), Applied Physics Letters. https://doi.org/10.1063/5.0141863
- High conductivity in Ge-doped AlN achieved by a non-equilibrium process
- Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
- High p-conductivity in AlGaN enabled by polarization field engineering
- Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
- Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
- Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023), APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443
